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MUN5231DW1T1 The On Semiconductor MUN5231DW1T1 is a pre-biased NPN transistor array. It features a 50V collector-emitter breakdown voltage and is housed in an SC-88 package.
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MUN5231DW1T1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5231DW1T1 is a pre-biased NPN transistor array. It features a 50V collector-emitter breakdown voltage and is housed in an SC-88 package.
✓ Total Stock: 2,935 pcs
$ Price Range: $0.99

MUN5231DW1T1 Available from 1 distributor

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✓ Non-Authorised
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Bristol Electronics ✓
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2,935 pcs
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MUN5231DW1T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MUN5231DW1T1 Description

Short technical summary and product information.

The MUN5231DW1T1 from On Semiconductor is a dual pre-biased NPN transistor array designed for various electronic applications. This component offers a collector-emitter breakdown voltage of up to 50V and a maximum power dissipation of 250mW.

 

It is supplied in an SC-88/SC70-6/SOT-363 package, suitable for surface-mount applications where space is a constraint. The integrated base and emitter resistors simplify circuit design, with both R1 and R2 specified at 1kOhms. The transistor type is 2 NPN - Pre-Biased (Dual), providing a convenient solution for logic level shifting and signal amplification.

 

This transistor array is a reliable choice for designers seeking integrated pre-bias functionality within a compact form factor. Its specifications make it suitable for general-purpose switching and amplification tasks in consumer electronics and industrial control systems.

MUN5231DW1T1 Quick Information

Product Type: Transistor Array, Pre-Biased
Series: MUN5231
Canonical Name: MUN5231DW1T1 Pre-Biased NPN Transistor Array
Subcategory: Bipolar (BJT)

MUN5231DW1T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5231DW1T1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5231DW1T1 Features

  • Dual NPN pre-biased transistor array
  • 50V collector-emitter breakdown voltage
  • Integrated 1kOhm base and emitter resistors
  • 250mW maximum power dissipation
  • SC-88/SC70-6/SOT-363 package

MUN5231DW1T1 Applications

  • Ideal for logic level shifting
  • Suitable for signal amplification
  • Used in consumer electronics
  • Applicable in industrial control

MUN5231DW1T1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the MUN5231DW1T1?

The maximum collector-emitter breakdown voltage is 50V.

What is the Vce Saturation voltage at 5mA collector current and 10mA base current?

The Vce Saturation is 250mV at 5mA collector current and 10mA base current.

What type of transistor is the MUN5231DW1T1?

It is a 2 NPN - Pre-Biased (Dual) transistor.

What are the resistance values for the integrated resistors?

Both the emitter base resistor (R2) and the base resistor (R1) are 1kOhms.

What is the maximum power dissipation for this transistor array?

The maximum power dissipation is 250mW.

What package is the MUN5231DW1T1 supplied in?

It is supplied in an SC-88/SC70-6/SOT-363 package.

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