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MUN5216DW1T1G The MUN5216DW1T1G is a dual NPN pre-biased transistor array from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5216DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5216DW1T1G is a dual NPN pre-biased transistor array from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 72,878 pcs
$ Price Range: $0.99

MUN5216DW1T1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
67,328 pcs
On Request
67328 pcs On Request 1 On Request On Request 1830+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
2,920 pcs
On Request
2920 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
2,630 pcs
On Request
2630 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN5216DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5216DW1T1G Description

Short technical summary and product information.

The MUN5216DW1T1G is a dual NPN pre-biased transistor array manufactured by On Semiconductor. This series is designed to replace a single transistor and its external bias resistor network, integrating a monolithic bias network consisting of a series base resistor and a base-emitter resistor into a single device. This integration helps reduce system cost and board space.

 

Key electrical specifications include a collector-emitter voltage of 50Vdc, a continuous collector current of 100mAdc, and a typical DC current gain (hFE) of 160 at 5mA and 10V. The integrated base resistor has a nominal value of 4.7kΩ. The saturation voltage (Vce) is a maximum of 250mV at 1mA collector current and 1mA base current.

 

This device is supplied in a 6-TSSOP, SC-88, SOT-363 package, suitable for surface mount applications. The power dissipation is rated at 187mW (one junction heated) or 250mW (both junctions heated) at 25°C ambient temperature for the SOT-363 package. It operates within a junction and storage temperature range of -55°C to +150°C.

 

The MUN5216DW1T1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

MUN5216DW1T1G Quick Information

Product Type: Transistor Array
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased

MUN5216DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5216DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5216DW1T1G Features

  • Dual NPN pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 4.7kΩ base resistor.
  • SOT-363 surface mount package.

MUN5216DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Suitable for automotive requirements.
  • Replaces discrete transistor and resistor networks.

MUN5216DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5216DW1T1G?

The collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the integrated base resistor value?

The integrated base resistor value is 4.7 kΩ.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

What package type is the MUN5216DW1T1G supplied in?

It is supplied in a 6-TSSOP, SC-88, SOT-363 package.

Is this device RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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