| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,320 pcs
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1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor MUN5215T1 is a pre-biased NPN bipolar junction transistor (BJT) designed for surface mount applications. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It features a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA.
The transistor includes a base resistor (R1) of 10 kΩ and has a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current.
Packaged in an SC-70-3 (SOT323) surface mount package, the MUN5215T1 is suitable for low-power applications. The device has a total power dissipation of 202 mW at 25°C ambient temperature (Note 1) and operates within a junction and storage temperature range of -55°C to +150°C.
This series of digital transistors simplifies circuit design by replacing individual components with a single integrated device, leading to reduced component count and system cost.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MUN5215T1 is 50 Vdc.
The maximum collector current (IC) for the MUN5215T1 is 100 mAdc.
The MUN5215T1 is available in an SC-70-3 (SOT323) package.
The integrated base resistor (R1) in the MUN5215T1 is 10 kΩ.
The junction and storage temperature range for the MUN5215T1 is -55°C to +150°C.