MUN5215DW1T1G The On Semiconductor MUN5215DW1T1G is a dual NPN pre-biased bipolar transistor array. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5215DW1T1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5215DW1T1G is a dual NPN pre-biased bipolar transistor array. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 1,649,341 pcs
$ Price Range: $0.28

MUN5215DW1T1G Available from 4 distributors

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1,643,636 pcs
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20 pcs
$0.28 ℹ
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20 pcs $0.28
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MUN5215DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5215DW1T1G Description

Short technical summary and product information.

The MUN5215DW1T1G from On Semiconductor is a dual NPN pre-biased bipolar transistor array designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, eliminating the need for external resistors.

 

Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a nominal base-emitter resistor of 10kΩ. The transistor type is 2 NPN - Pre-Biased (Dual), with a DC current gain (hFE) of 160 (min) at 5mA, 10V and a Vce saturation of 250mV (max) at 1mA, 10mA.

 

This component is housed in a compact SC-88/SC70-6/SOT-363 surface mount package. It has a power dissipation rating of 250mW at 25°C (one junction heated) and 385mW (both junctions heated). The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

The MUN5215DW1T1G is suitable for applications requiring integrated bias resistors, simplifying designs and reducing component count.

MUN5215DW1T1G Quick Information

Product Type: Transistor Array
Series: MUN5215DW1T1G
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased Bipolar Transistor (BJT)

MUN5215DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5215DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5215DW1T1G Features

  • Dual NPN pre-biased bipolar transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface mount package.
  • Pb-Free and Halogen Free compliance.

MUN5215DW1T1G Applications

  • Simplifies circuit design and reduces board space.
  • Integrates transistor and bias resistors.
  • Suitable for digital logic applications.
  • Reduces component count in systems.

MUN5215DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5215DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current of the MUN5215DW1T1G?

The continuous collector current is 100 mAdc.

What is the power dissipation rating for the MUN5215DW1T1G?

The power dissipation is 250mW at 25°C (one junction heated).

What package type is the MUN5215DW1T1G supplied in?

The MUN5215DW1T1G is supplied in a SC-88/SC70-6/SOT-363 package.

Is the MUN5215DW1T1G RoHS compliant?

The MUN5215DW1T1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MUN5215DW1T1G?

The Moisture Sensitivity Level is 1 Unlimited.

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