| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,643,636 pcs
|
1643636 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
5,510 pcs
|
5510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
175 pcs
|
175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
20 pcs
$0.28
|
20 pcs |
$0.28
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MUN5215DW1T1G from On Semiconductor is a dual NPN pre-biased bipolar transistor array designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, eliminating the need for external resistors.
Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a nominal base-emitter resistor of 10kΩ. The transistor type is 2 NPN - Pre-Biased (Dual), with a DC current gain (hFE) of 160 (min) at 5mA, 10V and a Vce saturation of 250mV (max) at 1mA, 10mA.
This component is housed in a compact SC-88/SC70-6/SOT-363 surface mount package. It has a power dissipation rating of 250mW at 25°C (one junction heated) and 385mW (both junctions heated). The device is Pb-Free and Halogen Free, complying with RoHS standards.
The MUN5215DW1T1G is suitable for applications requiring integrated bias resistors, simplifying designs and reducing component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 250mW at 25°C (one junction heated).
The MUN5215DW1T1G is supplied in a SC-88/SC70-6/SOT-363 package.
The MUN5215DW1T1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.