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MUN5214DW1T1G The MUN5214DW1T1G is a Dual NPN Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5214DW1T1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5214DW1T1G is a Dual NPN Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 603,557 pcs
$ Price Range: $0.04

MUN5214DW1T1G Available from 5 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN5214DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5214DW1T1G Description

Short technical summary and product information.

The ON Semiconductor MUN5214DW1T1G is a dual NPN pre-biased bipolar transistor array designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, eliminating the need for external resistors. It operates with a collector-emitter voltage (VCEO) of up to 50V and a continuous collector current (IC) of 100mA. The transistor array has a power dissipation of 250mW at 25°C and features a DC current gain (hFE) of 80 minimum at 5mA, 10V. The saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA, 10mA. The device includes a base-emitter resistor of 47kΩ. It is supplied in a surface-mount SOT-363 package, also known as SC-88/SC70-6. The standard package quantity is 3,000 units on tape and reel. This series is Pb-Free and Halogen Free compliant.

MUN5214DW1T1G Quick Information

Product Type: Transistor
Series: MUN5214DW1T1G
Canonical Name: Dual NPN Pre-Biased Transistor
Subcategory: Pre-Biased

MUN5214DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5214DW1T1G Estimated Pricing

Qty Low High
1+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5214DW1T1G Features

  • Dual NPN pre-biased transistor array
  • 50V collector-emitter voltage rating
  • 100mA continuous collector current
  • 250mW power dissipation
  • SOT-363 surface mount package

MUN5214DW1T1G Applications

  • Used in signal amplification circuits
  • Suitable for switching applications
  • Ideal for pre-biased transistor arrays
  • Applicable in compact electronic modules

MUN5214DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5214DW1T1G?

The maximum collector-emitter voltage (VCEO) is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is 100 mAdc.

What is the power dissipation of the MUN5214DW1T1G?

The power dissipation is 250mW at 25°C.

What package type is the MUN5214DW1T1G supplied in?

It is supplied in a SOT-363 package.

Is the MUN5214DW1T1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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