| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5213DW1T3G from On Semiconductor is a dual NPN pre-biased transistor, integrating a single transistor with a monolithic bias network. This design eliminates the need for external bias resistors, reducing system cost and board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It also features a 47kΩ bias resistor and a DC current gain (hFE) of 80 minimum at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current.
This device is supplied in a compact SC-88/SC70-6/SOT-363 surface mount package, making it suitable for applications where space is limited. The power dissipation is rated at 250mW (one junction heated) and 385mW (both junctions heated) at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
The continuous collector current (IC) is 100 mAdc.
The bias resistor value is 47kΩ.
It is supplied in an SC-88/SC70-6/SOT-363 package.
The power dissipation is 385mW when both junctions are heated at TA = 25°C, and 256mW when one junction is heated at TA = 25°C.