MUN5213DW1T1G The On Semiconductor MUN5213DW1T1G is a Dual NPN Pre-Biased Bipolar Transistor designed for simplified circuit design. It features integrated resistors and is housed in a SOT-363 package.
Mfr Part #:

MUN5213DW1T1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5213DW1T1G is a Dual NPN Pre-Biased Bipolar Transistor designed for simplified circuit design. It features integrated resistors and is housed in a SOT-363 package.
✓ Total Stock: 39,496 pcs
$ Price Range: $0.99

MUN5213DW1T1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MUN5213DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5213DW1T1G Description

Short technical summary and product information.

The On Semiconductor MUN5213DW1T1G is a dual NPN bias resistor transistor (BRT) designed to replace a single transistor and its external bias network. This integration simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. The device has a maximum power dissipation of 250mW. It features integrated base resistors (R1) and emitter-base resistors (R2) of 47kΩ each. The minimum DC current gain (hFE) is 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.

 

This transistor is supplied in a SOT-363 surface mount package, also known as SC-88/SC70-6. The standard package quantity is 3,000 units on tape and reel. Its design is suitable for applications requiring reduced component count and simplified board layouts.

MUN5213DW1T1G Quick Information

Product Type: Dual NPN Bias Resistor Transistor
Series: MUN5213DW1T1G
Canonical Name: On Semiconductor MUN5213DW1T1G Dual NPN Bias Resistor Transistor
Subcategory: BJT Arrays, Pre-Biased

MUN5213DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5213DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5213DW1T1G Features

  • Dual NPN pre-biased transistor.
  • Integrated 47kΩ bias resistors.
  • 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • 250mW maximum power dissipation.

MUN5213DW1T1G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for digital logic applications.

MUN5213DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5213DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the power dissipation of the MUN5213DW1T1G?

The maximum power dissipation is 250mW.

What are the integrated resistor values?

The device has integrated base resistors (R1) and emitter-base resistors (R2) of 47kΩ each.

What package type is the MUN5213DW1T1G supplied in?

It is supplied in a SOT-363 surface mount package.

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