MUN5212T1G

The MUN5212T1G is a digital transistor (BRT) from ON Semiconductor, integrating an NPN transistor with a monolithic bias resistor network. This design simplifies circuit design, reduces board space, and lowers component count by eliminating external resistors. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.

The device includes an internal bias resistor network with a nominal resistance of 2.2 kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 5mA/10V and a saturation voltage (Vce Sat) of 250mV maximum at 300µA/10mA.

Packaged in an SC-70-3 (SOT-323) surface-mount case, the MUN5212T1G is suitable for various applications requiring integrated bias circuitry. The transistor type is NPN - Pre-Biased, with a maximum power dissipation of 20mW.

This series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.