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MUN5212DW1T1G The On Semiconductor MUN5212DW1T1G is a dual NPN pre-biased transistor designed to simplify circuit design and reduce board space. It features integrated resistors for bias network functionality.
Mfr Part #:

MUN5212DW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5212DW1T1G is a dual NPN pre-biased transistor designed to simplify circuit design and reduce board space. It features integrated resistors for bias network functionality.
✓ Total Stock: 64,015 pcs
$ Price Range: $0.99

MUN5212DW1T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
61,020 pcs
On Request
61020 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
2,995 pcs
On Request
2995 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN5212DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5212DW1T1G Description

Short technical summary and product information.

The MUN5212DW1T1G from On Semiconductor is a dual NPN pre-biased transistor (BRT) designed to replace a single transistor and its external bias resistor network. This integration simplifies circuit design, reduces component count, and saves valuable board space. Each transistor in the pair has an integrated bias resistor network, consisting of a series base resistor and a base-emitter resistor.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The device has a power dissipation of 250mW (both junctions heated) at 25°C. The pre-bias network includes a nominal 22kΩ base-emitter resistor. The DC current gain (hFE) is a minimum of 60 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.

 

This transistor array is supplied in a compact SOT-363 surface mount package, also known as SC-88 or SC70-6. It is suitable for applications requiring simplified digital logic implementation. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

The MUN5212DW1T1G is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable.

MUN5212DW1T1G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased Transistor Array

MUN5212DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN5212DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5212DW1T1G Features

  • Dual NPN pre-biased transistor array.
  • Simplifies circuit design and reduces board space.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 22kΩ base-emitter resistor.

MUN5212DW1T1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Suitable for space-constrained applications.
  • Automotive applications supported (AEC-Q101).

MUN5212DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (VCEO) for the MUN5212DW1T1G?

The collector-emitter voltage (VCEO) is 50 Vdc.

What is the continuous collector current (IC) for this transistor array?

The continuous collector current (IC) is 100 mAdc.

What is the power dissipation of the MUN5212DW1T1G?

The power dissipation is 250mW when both junctions are heated at 25°C.

What is the package type for the MUN5212DW1T1G?

The package type is SOT-363, also known as SC-88 or SC70-6.

What is the RoHS status of the MUN5212DW1T1G?

The device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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