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MUN5211DW1T1G The MUN5211DW1T1G is a Dual NPN Bias Resistor Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current, housed in a SOT-363 package.
Mfr Part #:

MUN5211DW1T1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5211DW1T1G is a Dual NPN Bias Resistor Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current, housed in a SOT-363 package.
✓ Total Stock: 16,273 pcs
$ Price Range: $0.99

MUN5211DW1T1G Available from 6 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN5211DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5211DW1T1G Description

Short technical summary and product information.

The MUN5211DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) from ON Semiconductor, designed to replace a single transistor and its external bias network, reducing system cost and board space.

 

This device offers a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It integrates two NPN transistors with monolithic bias resistor networks, each featuring a 10kΩ resistor. The DC current gain (hFE) is a minimum of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.

 

The transistor is supplied in a SOT-363 package, also known as SC-88 or SC70-6, suitable for surface mounting. The total device dissipation is rated at 250mW at 25°C ambient temperature when both junctions are heated.

 

This series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is suitable for applications requiring simplified circuit design and reduced component count.

MUN5211DW1T1G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

MUN5211DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5211DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5211DW1T1G Features

  • Dual NPN pre-biased transistor.
  • Integrated 10kΩ bias resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-363 package.

MUN5211DW1T1G Applications

  • Simplifies circuit design.
  • Reduces board space.
  • Reduces component count.
  • Suitable for digital logic applications.

MUN5211DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5211DW1T1G?

The maximum collector-emitter voltage (VCEO) for the MUN5211DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 100 mAdc.

What is the integrated resistor value?

The integrated bias resistors in this device have a nominal value of 10kΩ.

What is the package type for the MUN5211DW1T1G?

The MUN5211DW1T1G is supplied in a SOT-363 package.

What is the RoHS status of this component?

This component is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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