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MUN5137DW1T1G The MUN5137DW1T1G is a Dual PNP Pre-Biased Transistor from On Semiconductor. It features a 50V voltage rating and 100mA continuous current capability.
Mfr Part #:

MUN5137DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5137DW1T1G is a Dual PNP Pre-Biased Transistor from On Semiconductor. It features a 50V voltage rating and 100mA continuous current capability.
✓ Total Stock: 36,000 pcs
$ Price Range: $0.99

MUN5137DW1T1G Available from 1 distributor

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✓ Non-Authorised
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36,000 pcs
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MUN5137DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5137DW1T1G Description

Short technical summary and product information.

The On Semiconductor MUN5137DW1T1G is a Dual PNP Pre-Biased Transistor designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor.

 

Key electrical specifications include a collector-emitter voltage of 50Vdc, a continuous collector current of 100mAdc, and a power dissipation of 250mW. The pre-biased network includes a 22 kΩ base-emitter resistor. The transistor type is 2 PNP - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 80 at 5mA, 10V and a Vce saturation of 250mV at 5mA, 10mA.

 

This component is supplied in a compact Surface Mount SC-88/SC70-6/SOT-363 package, making it suitable for applications where space is limited. It is Pb-Free and Halogen Free/BFR Free, complying with RoHS standards.

 

The MUN5137DW1T1G is designed to replace individual transistors and external bias resistors, thereby reducing component count and system cost. Its integrated nature simplifies circuit implementation for various digital applications.

MUN5137DW1T1G Quick Information

Product Type: Transistor
Canonical Name: Dual PNP Pre-Biased Transistor
Subcategory: Pre-Biased Transistor Array

MUN5137DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5137DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5137DW1T1G Features

  • Dual PNP pre-biased transistor configuration.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 250mW maximum power dissipation.
  • Surface mount SOT-363 package.

MUN5137DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Used in digital logic circuits.
  • Replaces discrete transistors and bias resistors.

MUN5137DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5137DW1T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the power dissipation of this transistor array?

The power dissipation is 250mW.

What type of transistor is the MUN5137DW1T1G?

It is a Dual PNP Pre-Biased Transistor.

What is the package type for the MUN5137DW1T1G?

The device is supplied in a Surface Mount SOT-363 package.

Is the MUN5137DW1T1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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