| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5134T1G from On Semiconductor is a PNP type digital transistor with a monolithic bias resistor network, designed to replace a single transistor and its external resistors. This integration simplifies circuit design, reduces component count, and saves board space.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA and 10mA. It also features a base resistor of 47 kΩ.
This transistor is housed in a compact SC-70, SOT-323 package, suitable for surface mount applications. The power dissipation is rated at 202 mW. The device is RoHS3 compliant and has an MSL of 1.
Its design makes it suitable for applications where component reduction and space saving are critical. The pre-biased nature simplifies the external circuitry required for operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5134T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN5134T1G is 100 mAdc.
The power dissipation for the MUN5134T1G is 202 mW.
The MUN5134T1G is supplied in a SC-70, SOT-323 package.
Yes, the MUN5134T1G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the MUN5134T1G is 1.