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MUN5131DW1T1G The On Semiconductor MUN5131DW1T1G is a dual PNP pre-biased transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5131DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5131DW1T1G is a dual PNP pre-biased transistor designed for simplified circuit design and reduced board space. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 60,000 pcs
$ Price Range: $0.99

MUN5131DW1T1G Available from 1 distributor

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✓ Non-Authorised
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60,000 pcs
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MUN5131DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5131DW1T1G Description

Short technical summary and product information.

The MUN5131DW1T1G from On Semiconductor is a dual PNP bias resistor transistor (BRT) designed to replace a single transistor and its external bias network. This integration simplifies circuit design, reduces component count, and saves board space. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.

 

The device integrates a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor, each with a nominal value of 2.2kΩ. The transistor type is 2 PNP - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 8 at 5mA and 10V. The saturation voltage (Vce(sat)) is a maximum of 250mV at 5mA and 10mA.

 

Packaged in a compact SC-88/SC70-6/SOT-363 surface mount package, the MUN5131DW1T1G is suitable for applications where space is limited. The total device dissipation is rated at 250mW at 25°C (one junction heated) and 385mW (both junctions heated). The operating temperature range is from -55°C to +150°C.

 

This series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.

MUN5131DW1T1G Quick Information

Product Type: Transistor
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Pre-Biased

MUN5131DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5131DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5131DW1T1G Features

  • Dual PNP pre-biased transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 2.2kΩ bias resistors.
  • Compact SOT-363 surface mount package.

MUN5131DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Suitable for automotive requirements.
  • Replaces single transistor and bias network.

MUN5131DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5131DW1T1G?

The collector-emitter voltage (VCEO) for the MUN5131DW1T1G is 50Vdc.

What is the continuous collector current of the MUN5131DW1T1G?

The continuous collector current (IC) for the MUN5131DW1T1G is 100mAdc.

What is the resistance value of the integrated resistors in the MUN5131DW1T1G?

The MUN5131DW1T1G has integrated resistors with a nominal value of 2.2kΩ.

What package type is the MUN5131DW1T1G supplied in?

The MUN5131DW1T1G is supplied in a SC-88/SC70-6/SOT-363 package.

What is the RoHS status of the MUN5131DW1T1G?

The MUN5131DW1T1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MUN5131DW1T1G?

The Moisture Sensitivity Level (MSL) for the MUN5131DW1T1G is 1.

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