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MUN5116DW1T1G The MUN5116DW1T1G from ON Semiconductor is a Dual PNP Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous current.
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MUN5116DW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5116DW1T1G from ON Semiconductor is a Dual PNP Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous current.
✓ Total Stock: 243,000 pcs
$ Price Range: $0.99

MUN5116DW1T1G Available from 2 distributors

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MUN5116DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5116DW1T1G Description

Short technical summary and product information.

The MUN5116DW1T1G is a Dual PNP Bias Resistor Transistor (BRT) from ON Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces a single transistor and its external bias resistors, reducing component count and board space.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It also features a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a Vce saturation of 250mV maximum at 1mA and 10mA. The integrated bias resistor (R1) has a nominal value of 4.7kΩ.

 

This transistor array is housed in a compact SOT-363 (SC-88/SC70-6) surface mount package. It operates within a junction and storage temperature range of -55°C to +150°C. The device is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

 

Designed for applications requiring reduced component count and board space, the MUN5116DW1T1G offers a simplified solution for bias resistor networks.

MUN5116DW1T1G Quick Information

Product Type: Transistor Array, Pre-Biased
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Pre-Biased

MUN5116DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN5116DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5116DW1T1G Features

  • Dual PNP transistor with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 4.7kΩ integrated bias resistor.
  • Compact SOT-363 surface mount package.

MUN5116DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Replaces discrete transistor and bias resistors.
  • Suitable for digital logic applications.

MUN5116DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5116DW1T1G?

The collector-emitter voltage (VCEO) is 50Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is 100mAdc.

What is the package type for this transistor array?

The transistor array is supplied in a SOT-363 package.

What is the integrated bias resistor value?

The integrated bias resistor (R1) has a nominal value of 4.7kΩ.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is this device RoHS compliant?

Yes, this device is RoHS3 Compliant.

Is this device Halogen Free?

Yes, this device is Halogen Free/BFR Free.

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