| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,880 pcs
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2880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5116DW1T1 from On Semiconductor is a dual PNP silicon transistor featuring an integrated monolithic bias resistor network. This design simplifies circuit design, reduces board space, and lowers component count by replacing a single transistor and its external resistors.
This device is suitable for low-power surface mount applications. Key electrical specifications include a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. It has a nominal resistance of 4.7kΩ and a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 250mV at 1mA base current and 10mA collector current.
The transistor array is housed in a compact SC-88/SC70-6/SOT-363 package, making it ideal for applications where board space is limited. The mounting type is surface mount. The device operates within a junction and storage temperature range of -55°C to +150°C. Thermal characteristics include a total device dissipation of 250mW (both junctions heated) at 25°C ambient temperature on a 1.0 x 1.0 inch FR-4 pad.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The maximum collector current is 100mA.
The integrated bias resistor has a nominal value of 4.7kΩ.
The device is supplied in a SOT-363 package.
The junction and storage temperature range is -55°C to +150°C.