MUN5115T1G The MUN5115T1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous current rating.
Mfr Part #:

MUN5115T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5115T1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and a 100mA continuous current rating.
✓ Total Stock: 118,020 pcs
$ Price Range: $0.99

MUN5115T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
72,000 pcs
72000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
46,020 pcs
46020 pcs On Request 1 On Request On Request On Request On Request On Request

MUN5115T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5115T1G Description

Short technical summary and product information.

The MUN5115T1G is a PNP Pre-Biased Transistor manufactured by ON Semiconductor. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It is designed to replace a single device and its external resistor bias network.

 

Key electrical specifications include a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The transistor type is PNP with a pre-biased configuration, featuring a nominal R1 resistance of 10 kΩ. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage.

 

This component is housed in a surface mount SC-70-3 (SOT-323) package, making it suitable for compact electronic designs. The maximum power dissipation is rated at 200 mW at 25°C ambient temperature. The input forward voltage is 40 Vdc and the input reverse voltage is 5 Vdc.

 

The MUN5115T1G is designed for applications requiring simplified circuitry and reduced component count. Its integrated bias network offers convenience and space savings in various electronic systems.

MUN5115T1G Quick Information

Product Type: Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Pre-Biased

MUN5115T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5115T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5115T1G Features

  • PNP Pre-Biased Transistor design.
  • 50V Collector-Emitter Voltage rating.
  • 100mA Continuous Collector Current.
  • Integrated 10 kΩ bias resistor.
  • Surface mount SC-70-3 (SOT-323) package.

MUN5115T1G Applications

  • Suitable for automotive electronic circuits.
  • Ideal for low-voltage switching applications.
  • Used in compact transistor-based switching circuits.
  • Applicable in systems requiring high collector-emitter voltage.
  • Suitable for space-constrained electronic designs.

MUN5115T1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5115T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the resistance value of the integrated bias resistor?

The integrated bias resistor (R1) has a nominal value of 10 kΩ.

What is the package type for the MUN5115T1G?

The MUN5115T1G is supplied in an SC-70-3 (SOT-323) package for surface mounting.

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