SMUN5114T3G
On Semiconductor
The SMUN5114T3G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,890 pcs
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5890 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MUN5113T1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network. This design simplifies circuit design, reduces board space, and lowers component count by replacing a single transistor and its external bias resistors.
Key electrical characteristics include a maximum collector-emitter voltage of 50 Vdc and a maximum collector current of 100 mAdc. The device has a power dissipation rating of 202 mW at 25°C ambient temperature. It features a pre-biased configuration with a nominal bias resistor value of 47 kΩ.
The transistor is housed in an SC-70-3 (SOT-323) package, suitable for low power surface mount applications. The package can be soldered using wave or reflow methods, with modified gull-winged leads designed to absorb thermal stress during soldering.
This series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also qualified for automotive applications when using the S or NSV prefix.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5113T1 is 50 Vdc.
The maximum collector current (IC) for the MUN5113T1 is 100 mAdc.
The power dissipation (PD) for the MUN5113T1 is 202 mW at 25°C ambient temperature.
The MUN5113T1 is supplied in an SC-70-3 (SOT-323) package.
The bias resistor value for the MUN5113T1 is 47 kΩ.