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MUN5113DW1T1G The MUN5113DW1T1G from ON Semiconductor is a Dual PNP Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
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MUN5113DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5113DW1T1G from ON Semiconductor is a Dual PNP Bias Resistor Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 135,000 pcs
$ Price Range: $0.99

MUN5113DW1T1G Available from 1 distributor

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✓ Non-Authorised
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135,000 pcs
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MUN5113DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5113DW1T1G Description

Short technical summary and product information.

The MUN5113DW1T1G is a Dual PNP Bias Resistor Transistor (BRT) from ON Semiconductor, designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network. This device eliminates the need for external resistors, reducing system cost and board space.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The transistor type is 2 PNP - Pre-Biased (Dual), with a DC current gain (hFE) minimum of 80 at 5mA and 10V. The Vce saturation voltage is a maximum of 250mV at 300µA and 10mA. The integrated resistors have a value of 47kOhm.

 

This component is supplied in a SOT-363 package and is designed for surface mount applications. It operates within a temperature range of -55°C to +150°C. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

The MUN5113DW1T1G is suitable for applications where circuit simplification and component count reduction are desired. Its integrated bias network makes it a convenient solution for various digital and analog circuits.

MUN5113DW1T1G Quick Information

Product Type: Transistor
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: BJT Arrays, Pre-Biased

MUN5113DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5113DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5113DW1T1G Features

  • Dual PNP pre-biased transistor.
  • 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • Integrated 47kOhm resistors.
  • Surface mount SOT-363 package.

MUN5113DW1T1G Applications

  • Simplifies circuit designs.
  • Reduces board space.
  • Reduces component count.
  • Suitable for digital circuits.
  • Suitable for analog circuits.

MUN5113DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5113DW1T1G?

The maximum collector-emitter voltage (VCEO) for the MUN5113DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 100 mAdc.

What is the resistance value of the integrated resistors?

The integrated resistors in the MUN5113DW1T1G have a value of 47kOhm.

What package type is the MUN5113DW1T1G supplied in?

This transistor is supplied in a SOT-363 package.

Is the MUN5113DW1T1G RoHS compliant?

Yes, the MUN5113DW1T1G is RoHS3 Compliant.

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