| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MUN5112DW1T1G from ON Semiconductor is a dual PNP bias resistor transistor (BRT). This device integrates two PNP transistors with monolithic bias networks, each consisting of a series base resistor and a base-emitter resistor. The integrated resistors are 22kΩ, simplifying circuit design and reducing board space.
Key electrical specifications include a maximum collector-base voltage and collector-emitter voltage of 50Vdc, and a continuous collector current of 100mAdc. The DC current gain (hFE) is a minimum of 60 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. The device has a power dissipation rating of 250mW at 25°C.
This pre-biased transistor is supplied in a SOT-363 surface mount package. It is designed to replace single transistors and their external resistor bias networks, reducing component count and system cost. The device is Pb-free and halogen-free, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5112DW1T1G is 50 Vdc.
The continuous collector current (IC) for the MUN5112DW1T1G is 100 mAdc.
The integrated resistors in the MUN5112DW1T1G are 22kΩ.
The MUN5112DW1T1G is supplied in a SOT-363 surface mount package.
Yes, the MUN5112DW1T1G is RoHS3 Compliant.