| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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219,000 pcs
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219000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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The ON Semiconductor MUN2236T1G is a digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit design and reduces board space by replacing a single transistor and its external bias resistors. It operates with a collector-emitter voltage (VCEO) of up to 50V and a continuous collector current (IC) of 100mA.
The device includes integrated resistors with R1 and R2 values of 100 kΩ. The transistor type is NPN, pre-biased, with a typical DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current.
Packaged in a surface-mount SC-59 (TO-236-3, SOT-23-3) case, the MUN2236T1G has a power dissipation rating of 338 mW. It is Pb-free and halogen-free, compliant with RoHS3 standards. This component is suitable for applications requiring simplified digital logic interfaces.
Key electrical characteristics include a maximum collector-emitter voltage of 50V and a maximum continuous collector current of 100mA. The integrated base resistors are 100 kΩ. The transistor type is NPN pre-biased, offering a typical hFE of 80.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN2236T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN2236T1G is 100 mAdc.
The MUN2236T1G has integrated resistors with R1 = 100 kΩ and R2 = 100 kΩ.
The MUN2236T1G is supplied in an SC-59 package.