| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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303,000 pcs
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303000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MUN2235T1G is a digital transistor designed to replace a single transistor and its external bias resistor network. This NPN pre-biased transistor integrates a monolithic bias network consisting of a series base resistor (2.2 kΩ) and a base-emitter resistor (47 kΩ).
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It has a power dissipation rating of 230 mW. The transistor type is NPN - Pre-Biased, with a minimum DC current gain (hFE) of 80 at 5mA, 10V.
The device is housed in an SC-59 package, suitable for surface mounting. This integration simplifies circuit design, reduces board space, and lowers component count in various electronic applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 230 mW.
The integrated resistors are 2.2 kΩ for R1 and 47 kΩ for R2.
The MUN2235T1G is available in the SC-59 package.
Yes, the MUN2235T1G is RoHS3 compliant.
The Moisture Sensitivity Level is 1.