MUN2235T1G The ON Semiconductor MUN2235T1G is an NPN pre-biased bipolar transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN2235T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN2235T1G is an NPN pre-biased bipolar transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 303,000 pcs
$ Price Range: $0.99

MUN2235T1G Available from 1 distributor

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MUN2235T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN2235T1G Description

Short technical summary and product information.

The ON Semiconductor MUN2235T1G is a digital transistor designed to replace a single transistor and its external bias resistor network. This NPN pre-biased transistor integrates a monolithic bias network consisting of a series base resistor (2.2 kΩ) and a base-emitter resistor (47 kΩ).

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It has a power dissipation rating of 230 mW. The transistor type is NPN - Pre-Biased, with a minimum DC current gain (hFE) of 80 at 5mA, 10V.

 

The device is housed in an SC-59 package, suitable for surface mounting. This integration simplifies circuit design, reduces board space, and lowers component count in various electronic applications.

MUN2235T1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: NPN Pre-Biased Transistor, 50V, 100mA, 2.2kΩ/47kΩ, SC-59
Subcategory: Bipolar (BJT)

MUN2235T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN2235T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN2235T1G Features

  • NPN pre-biased transistor with integrated resistors.
  • 50 Vdc collector-emitter voltage.
  • 100 mAdc continuous collector current.
  • 230 mW power dissipation.
  • Surface mount SC-59 package.

MUN2235T1G Applications

  • Suitable for low-voltage switching applications.
  • Ideal for compact digital transistor circuits.
  • Used in automotive and industrial control systems.
  • Applicable in signal amplification and switching.
  • Designed for space-constrained electronic designs.

MUN2235T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN2235T1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current of the MUN2235T1G?

The continuous collector current is 100 mAdc.

What is the power dissipation rating for the MUN2235T1G?

The power dissipation is 230 mW.

What are the integrated resistor values in the MUN2235T1G?

The integrated resistors are 2.2 kΩ for R1 and 47 kΩ for R2.

What package type is the MUN2235T1G available in?

The MUN2235T1G is available in the SC-59 package.

Is the MUN2235T1G RoHS compliant?

Yes, the MUN2235T1G is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the MUN2235T1G?

The Moisture Sensitivity Level is 1.

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