MUN2237T1G
On Semiconductor
The MUN2237T1G is an NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in an SC-59 package.
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2,645 pcs
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2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN2234T1G from ON Semiconductor is a single NPN pre-biased bipolar transistor (BRT) integrated with a monolithic bias resistor network. This design eliminates the need for external resistors, reducing component count and board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It has a minimum DC current gain (hFE) of 80 at 5mA and 10V. The integrated resistors are R1 (base input) at 22 kΩ and R2 (base-emitter) at 47 kΩ.
This transistor is housed in a surface-mount SC-59 package, making it suitable for compact electronic designs. The maximum operating temperature is 150°C. The device is Pb-Free and Halogen Free.
The MUN2234T1G is designed to simplify circuit design and reduce system costs by integrating the transistor and its bias resistors into a single component.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The transistor has an integrated base input resistor (R1) of 22 kΩ and a base-emitter resistor (R2) of 47 kΩ.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.
The maximum operating temperature is 150°C.
The MUN2234T1G is supplied in an SC-59 surface mount package.
Yes, the MUN2234T1G is RoHS3 Compliant.