| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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93,000 pcs
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93000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The MUN2231T1G is a digital transistor from ON Semiconductor, featuring an NPN pre-biased configuration. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, each with a nominal value of 2.2 kΩ. This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The transistor offers a minimum DC current gain (hFE) of 8 at 5mA and 10V, with a Vce saturation of 250mV maximum at 5mA and 10mA. The maximum power dissipation is rated at 338 mW.
This component is supplied in a surface mount SC-59 package (TO-236-3, SOT-23-3). It is designed to replace a single device and its external resistor bias network, making it suitable for applications where space and cost efficiency are critical.
The MUN2231T1G is Pb-free and Halogen-free, complying with RoHS standards. It is also rated for Moisture Sensitivity Level 1 (MSL 1).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
It uses a SC-59 (SOT-23-3) surface-mount package.
The maximum collector current is 100mA.
Yes, it is RoHS3 compliant.
The minimum DC current gain (hFE) is 8.