MUN2231T1G The MUN2231T1G is an NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current, integrated with 2.2 kΩ bias resistors.
Mfr Part #:

MUN2231T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN2231T1G is an NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current, integrated with 2.2 kΩ bias resistors.
✓ Total Stock: 93,000 pcs
$ Price Range: $0.99

MUN2231T1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
93,000 pcs
93000 pcs On Request 1 On Request On Request On Request On Request On Request

MUN2231T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN2231T1G Description

Short technical summary and product information.

The MUN2231T1G is a digital transistor from ON Semiconductor, featuring an NPN pre-biased configuration. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, each with a nominal value of 2.2 kΩ. This integration simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The transistor offers a minimum DC current gain (hFE) of 8 at 5mA and 10V, with a Vce saturation of 250mV maximum at 5mA and 10mA. The maximum power dissipation is rated at 338 mW.

 

This component is supplied in a surface mount SC-59 package (TO-236-3, SOT-23-3). It is designed to replace a single device and its external resistor bias network, making it suitable for applications where space and cost efficiency are critical.

 

The MUN2231T1G is Pb-free and Halogen-free, complying with RoHS standards. It is also rated for Moisture Sensitivity Level 1 (MSL 1).

MUN2231T1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

MUN2231T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MUN2231T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN2231T1G Features

  • NPN pre-biased transistor with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SC-59 package.
  • Pb-free and Halogen-free.

MUN2231T1G Applications

  • Suitable for low-voltage switching applications.
  • Ideal for compact digital transistor circuits.
  • Used in automotive and industrial electronics.
  • Applicable in space-saving electronic designs.

MUN2231T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the MUN2231T1G?

The maximum collector-emitter voltage is 50V.

What package type does the MUN2231T1G use?

It uses a SC-59 (SOT-23-3) surface-mount package.

What is the maximum collector current for this transistor?

The maximum collector current is 100mA.

Is the MUN2231T1G RoHS compliant?

Yes, it is RoHS3 compliant.

What is the minimum DC current gain (hFE) of the transistor?

The minimum DC current gain (hFE) is 8.

Home
Account

Categories