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MUN2213JT1 TRANS PREBIAS NPN 338MW SC59
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MUN2213JT1

Mfr Name: On Semiconductor
On Semiconductor
TRANS PREBIAS NPN 338MW SC59
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MUN2213JT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN2213JT1 Description

Short technical summary and product information.
TRANS PREBIAS NPN 338MW SC59

MUN2213JT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN2213JT1 Alternate Parts

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MUN2213T1G
MUN2213T1G
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The ON Semiconductor MUN2213T1G is an NPN pre-biased bipolar transistor designed for simplified circuit design and reduced board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
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MUN2214T1
MUN2214T1
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The MUN2214T1 is an NPN bipolar junction transistor designed for switching and amplification applications. It features a maximum collector current of 100mA and a collector-emitter voltage of 50V. The device is packaged in a SC59 package suitable for surface mounting.
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MUN2213T1
MUN2213T1
On Semiconductor
TRANS BRT NPN 100MA 50V SC59
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MUN2213JT1G
MUN2213JT1G
On Semiconductor
TRANS PREBIAS NPN 338MW SC59
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