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MUN2212T1G The ON Semiconductor MUN2212T1G is an NPN pre-biased transistor designed for simplified circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in a surface-mount SC-59 package.
Mfr Part #:

MUN2212T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN2212T1G is an NPN pre-biased transistor designed for simplified circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in a surface-mount SC-59 package.
✓ Total Stock: 489,000 pcs
$ Price Range: $0.99

MUN2212T1G Available from 3 distributors

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450,000 pcs
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MUN2212T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN2212T1G Description

Short technical summary and product information.

The MUN2212T1G from ON Semiconductor is a digital transistor (BRT) that integrates an NPN transistor with a monolithic bias resistor network. This design eliminates the need for external resistors, reducing component count and board space. It offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.

 

The internal bias network consists of two resistors, R1 and R2, each with a nominal value of 22 kΩ. This configuration simplifies circuit design and is suitable for various applications requiring a pre-biased transistor.

 

This device is supplied in a surface-mount SC-59 package, making it suitable for automated assembly processes. The transistor type is NPN, and it operates with a maximum power dissipation of 338 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce, and a Vce saturation of 250mV maximum at 300µA base current and 10mA collector current.

MUN2212T1G Quick Information

Product Type: Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

MUN2212T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN2212T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN2212T1G Features

  • NPN pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current capability.
  • Integrated 22 kΩ bias resistors.
  • Surface mount SC-59 package.

MUN2212T1G Applications

  • Ideal for digital logic circuits.
  • Used in signal switching applications.
  • Suitable for replacing discrete components.
  • Simplifies board layout and assembly.

MUN2212T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN2212T1G?

The collector-emitter voltage (VCEO) for the MUN2212T1G is 50 Vdc.

What is the continuous collector current of the MUN2212T1G?

The continuous collector current (IC) for the MUN2212T1G is 100 mAdc.

What type of transistor is the MUN2212T1G?

The MUN2212T1G is an NPN pre-biased transistor.

What package is the MUN2212T1G supplied in?

The MUN2212T1G is supplied in an SC-59 package.

What are the internal resistor values in the MUN2212T1G?

The MUN2212T1G contains integrated bias resistors R1 and R2, each with a nominal value of 22 kΩ.

What is the power dissipation of the MUN2212T1G?

The maximum power dissipation for the MUN2212T1G is 338 mW.

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