| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,115 pcs
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4115 pcs | On Request | 1 | On Request | On Request | 312 | On Request | On Request |
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The MUN2212T1 is an NPN silicon transistor from On Semiconductor, designed as a Bias Resistor Transistor (BRT). This integrated device replaces a single transistor and its external bias resistor network, simplifying circuit design and reducing board space. It features a monolithic bias network consisting of a series base resistor and a base-emitter resistor.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The transistor type is NPN pre-biased, with a typical DC current gain (hFE) of 60 at 5mA and 10V. It also has a saturation voltage (VCE(sat)) of 250mV maximum at 300µA base current and 10mA collector current. A built-in resistor with a nominal value of 22 kΩ is included.
The device is designed for low-power surface mount applications and comes in an SC-59 package (TO-236-3, SOT-23-3). The mounting type is surface mount. The total device dissipation is rated at 338 mW at 25°C ambient temperature when mounted on a 1.0 x 1.0 inch FR-4 pad. The operating and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN2212T1 is 50 Vdc.
The continuous collector current (IC) for the MUN2212T1 is 100 mAdc.
The MUN2212T1 has an integrated resistor with a nominal value of 22 kΩ.
The MUN2212T1 is supplied in the SC-59 package, which is a surface-mount type.
The junction and storage temperature range for the MUN2212T1 is -55°C to +150°C.