| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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36,000 pcs
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36000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MUN2211T1 is a preferred device in the Bias Resistor Transistor (BRT) series, designed to replace a single transistor and its external bias resistor network. This NPN silicon transistor integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor, simplifying circuit design and reducing board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50Vdc and a maximum collector current (IC) of 100mAdc. It features a minimum DC current gain (hFE) of 35 at 5mA, 10V, and a saturation voltage (Vce) of 250mV at 300µA, 10mA. The integrated bias resistor has a nominal value of 10 kΩ.
This device is housed in an SC-59 package, suitable for low power surface mount applications. The package can be soldered using wave or reflow methods, with modified gull-winged leads designed to absorb thermal stress during soldering. Thermal characteristics include a total device dissipation of 230mW at 25°C on a minimum pad, and a junction-to-ambient thermal resistance of 540°C/W under the same conditions. The operating and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN2211T1 is 50 Vdc.
The maximum collector current (IC) for the MUN2211T1 is 100 mAdc.
The MUN2211T1 has an integrated bias resistor with a nominal value of 10 kΩ.
The MUN2211T1 is supplied in an SC-59 package.
The junction and storage temperature range for the MUN2211T1 is -55°C to +150°C.