| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,485 pcs
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3485 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The ON Semiconductor MUN2211JT1G is a dual NPN pre-biased bipolar junction transistor (BJT) suitable for surface mount applications. It features integrated base resistors, simplifying circuit design. Key electrical specifications include a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.
This transistor has a maximum power dissipation of 250mW and a DC current gain (hFE) of at least 35 at 5mA and 10V. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The device includes internal base resistors (R1 and R2) of 10kΩ each.
The MUN2211JT1G is packaged in an SC-88/SC70-6/SOT-363 surface mount package, with a moisture sensitivity level of 1. It is RoHS3 compliant and REACH unaffected. This component is suitable for various electronic circuits requiring a pre-biased NPN transistor in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the MUN2211JT1G is 100mA.
The collector-emitter breakdown voltage (Vce) for the MUN2211JT1G is 50V.
The maximum power dissipation for the MUN2211JT1G is 250mW.
The MUN2211JT1G is supplied in an SC-88/SC70-6/SOT-363 package.
The Moisture Sensitivity Level (MSL) for the MUN2211JT1G is 1 (Unlimited).