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195,000 pcs
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195000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MUN2137T1G is a PNP pre-biased bipolar junction transistor (BJT) designed to integrate a single transistor with its necessary bias resistors into one component. This design simplifies circuit construction, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It features a DC current gain (hFE) of 80 minimum at 5mA and 10V, and a saturation voltage (Vce Sat) of 250mV maximum at 300µA and 10mA. The integrated bias resistor (R2) is 22 kΩ.
This transistor is housed in a compact SC-59 surface mount package (TO-236-3, SOT-23-3) with a power dissipation of 230 mW. Its pre-biased configuration makes it suitable for applications where simplified digital logic interfacing or signal level shifting is required.
The device is Pb-free and Halogen-free, aligning with environmental compliance standards. The SC-59 package is ideal for space-constrained designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN2137T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN2137T1G is 100 mAdc.
The MUN2137T1G is supplied in the SC-59 package, which is also known as TO-236-3 or SOT-23-3.
The power dissipation for the MUN2137T1G is 230 mW.
The integrated bias resistor (R2) in the MUN2137T1G is 22 kΩ.
The MUN2137T1G is RoHS3 Compliant.