MUN2134T1G The MUN2134T1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V Collector-Emitter Voltage and a 100mA continuous collector current.
Mfr Part #:

MUN2134T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN2134T1G is a PNP Pre-Biased Transistor from ON Semiconductor. It features a 50V Collector-Emitter Voltage and a 100mA continuous collector current.
✓ Total Stock: 300,000 pcs
$ Price Range: $0.99

MUN2134T1G Available from 1 distributor

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300,000 pcs
300000 pcs On Request 1 On Request On Request On Request On Request On Request

MUN2134T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN2134T1G Description

Short technical summary and product information.

The MUN2134T1G is a PNP Pre-Biased Transistor manufactured by ON Semiconductor. This digital transistor integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It is designed to replace a single device and its external resistor bias network.

 

Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 50 Vdc, a continuous Collector Current (IC) of 100 mAdc, and an Input Forward Voltage (VIN(fwd)) of 40 Vdc. The device also has a maximum Input Reverse Voltage (VIN(rev)) of 7 Vdc. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA, 10mA, and the DC Current Gain (hFE) is a minimum of 80 at 5mA, 10V.

 

This transistor is housed in a Surface Mount SC-59 package, also compatible with TO-236-3 and SOT-23-3 footprints. The power dissipation is rated at 230 mW. The integrated resistor value is 47 kΩ.

 

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

MUN2134T1G Quick Information

Product Type: Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Single, Pre-Biased

MUN2134T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN2134T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN2134T1G Features

  • PNP Pre-Biased Transistor simplifies design.
  • 50V Collector-Emitter Voltage rating.
  • 100mA continuous collector current.
  • Surface mount SC-59 package.
  • Integrated 47 kΩ bias resistor.

MUN2134T1G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Suitable for space-constrained PCBs.
  • Replaces discrete transistor and resistors.

MUN2134T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Collector-Emitter Voltage for the MUN2134T1G?

The Collector-Emitter Voltage (VCEO) for the MUN2134T1G is 50 Vdc.

What is the continuous Collector Current of the MUN2134T1G?

The continuous Collector Current (IC) for the MUN2134T1G is 100 mAdc.

What package type is the MUN2134T1G available in?

The MUN2134T1G is available in a Surface Mount SC-59 package, also compatible with TO-236-3 and SOT-23-3 footprints.

What is the integrated resistor value in the MUN2134T1G?

The integrated resistor value in the MUN2134T1G is 47 kΩ.

What is the power dissipation of the MUN2134T1G?

The power dissipation for the MUN2134T1G is 230 mW.

MUN2134T1G Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SMUN2113T1G
SMUN2113T1G
On Semiconductor
The ON Semiconductor SMUN2113T1G is a PNP pre-biased bipolar transistor designed for simplified circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current.
View Part
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