MUN2132T1

The MUN2132T1 from ON Semiconductor is a PNP silicon surface mount transistor featuring a monolithic bias resistor network. This integrated network, consisting of a series base resistor and a base-emitter resistor, simplifies circuit design and reduces board space by replacing individual components. The device is housed in an SC-59 package, suitable for low-power surface mount applications.

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a maximum collector current (IC) of 100 mAdc. The transistor type is PNP with pre-bias, and it has a nominal resistance value of 4.7 kΩ. The DC current gain (hFE) is a minimum of 15 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA and 10mA.

With a total device dissipation of 230 mW at 25°C (TA), the MUN2132T1 is designed for thermal management in compact applications. The operating and storage temperature range is from -55°C to +150°C. The SC-59 package is compatible with wave or reflow soldering, and its modified gull-winged leads help absorb thermal stress during the soldering process.

This series of Bias Resistor Transistors (BRT) is ideal for applications where component count reduction and board space savings are critical. The integrated resistors eliminate the need for external bias components, streamlining assembly and potentially lowering system costs.