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MUN2114T1G The MUN2114T1G is a pre-biased PNP bipolar junction transistor designed for switching and amplification applications. It features a collector-emitter voltage of 50V and a maximum collector current of 100mA.
Mfr Part #:

MUN2114T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN2114T1G is a pre-biased PNP bipolar junction transistor designed for switching and amplification applications. It features a collector-emitter voltage of 50V and a maximum collector current of 100mA.
✓ Total Stock: 200,776 pcs
$ Price Range: $0.99

MUN2114T1G Available from 3 distributors

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✓ Non-Authorised
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Flip Electronics ✓
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195,000 pcs
On Request
195000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
2,888 pcs
On Request
2888 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
2,888 pcs
On Request
2888 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN2114T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN2114T1G Description

Short technical summary and product information.

The MUN2114T1G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is a pre-biased PNP transistor suitable for switching and amplification tasks in electronic circuits. The device has a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA, making it suitable for low-power applications.

 

This transistor is packaged in a SC-59 package, which is a surface-mount type, facilitating compact circuit designs. Its design allows for easy integration into various electronic modules, especially where space constraints are critical. The device's electrical characteristics include a maximum input forward voltage of 40V, a maximum reverse voltage of 6V, and a power dissipation limit of 230mW at 25°C.

 

Designed for use in signal switching, amplification, and pre-biasing circuits, the MUN2114T1G offers reliable performance within its specified electrical limits. Its package and mounting type support automated assembly processes, making it suitable for mass production.

 

Overall, this transistor provides a compact, reliable solution for low-voltage, low-current applications in consumer electronics, industrial control, and automotive systems.

MUN2114T1G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: TRANS PREBIAS PNP 50V 100MA SC59

MUN2114T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN2114T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN2114T1G Features

  • Maximum collector-emitter voltage of 50V
  • Maximum collector current of 100mA
  • Surface mount SC-59 package
  • Pre-biased PNP transistor
  • Maximum power dissipation of 230mW

MUN2114T1G Applications

  • Used in low-power switching circuits
  • Suitable for signal amplification
  • Ideal for pre-biasing applications
  • Compatible with surface-mount assembly

MUN2114T1G FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the MUN2114T1G?

The maximum collector-emitter voltage (VCEO) is 50V.

What package type does the MUN2114T1G use?

It uses the SC-59 surface mount package.

What is the maximum collector current for this transistor?

The maximum collector current (IC) is 100mA.

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