SMUN2114T1G
On Semiconductor
The SMUN2114T1G is a PNP pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous current, housed in an SC-59 package.
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384,000 pcs
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384000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MUN2113T1G is a PNP Digital Transistor (BRT) that integrates a transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device also features an input forward voltage (VIN(fwd)) of 40 Vdc and an input reverse voltage (VIN(rev)) of 10 Vdc. The internal bias resistors are nominally 47 kΩ.
This transistor is housed in a surface mount SC-59 package, also known as TO-236-3 or SOT-23-3. It is designed for applications requiring a pre-biased PNP transistor configuration, offering a compact and efficient solution for various electronic circuits.
The device is Pb-free and Halogen-free, complying with modern environmental standards. It has a power dissipation rating of 230 mW at 25°C ambient temperature.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN2113T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN2113T1G is 100 mAdc.
The MUN2113T1G is a PNP Digital Transistor with a monolithic bias resistor network.
The MUN2113T1G is supplied in an SC-59 surface mount package.
The integrated bias resistors (R1 and R2) for the MUN2113T1G are nominally 47 kΩ.