MUN2112T1G

The ON Semiconductor MUN2112T1G is a PNP type digital transistor featuring a monolithic bias resistor network. This integration simplifies circuit design, reduces board space, and lowers component count by replacing individual resistors and a transistor.

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The transistor offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current.

The device operates within a temperature range of -55°C to +150°C. It is supplied in an SC-59 surface mount package, suitable for various electronic applications where space and component reduction are beneficial.

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.