MUN2111T1G

The MUN2111T1G from ON Semiconductor is a PNP type digital transistor featuring a monolithic bias resistor network. This integrated design replaces a single transistor and its external bias resistors, leading to reduced component count and smaller board footprints. It offers a collector-emitter voltage rating of 50V and a continuous collector current of 100mA.

The device includes internal resistors, specified as 10 kΩ for both R1 and R2, simplifying circuit implementation. The transistor type is PNP with pre-bias, and it has a DC current gain (hFE) of 35 minimum at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current.

Packaged in an SC-59 (TO-236-3, SOT-23-3) surface-mount case, the MUN2111T1G is suitable for applications requiring compact solutions. It has a power dissipation rating of 230mW. The component is RoHS3 compliant, Pb-free, and halogen-free, making it suitable for modern electronic designs.

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.