| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number MTY100N10E, is designed for power switching applications. It offers a high drain-to-source voltage rating of 100V and can handle a continuous drain current of 100A at case temperature.
The MOSFET exhibits a low on-resistance of 11mOhm at a gate-source voltage of 10V and a drain current of 50A. Key electrical parameters include a gate charge of 378nC and an input capacitance of 10640pF. The device operates within a temperature range of -55°C to 150°C.
Packaged in a TO-264-3, TO-264AA configuration, this MOSFET is designed for through-hole mounting. Its robust construction and specifications make it suitable for various power management circuits.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited rating, and REACH unaffected status. The device is built using Metal Oxide technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The continuous drain current is 100A at case temperature.
The Rds On is a maximum of 11mOhm at 50A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET built with Metal Oxide technology.
It is supplied in a TO-264-3, TO-264AA package.
It is designed for through-hole mounting.