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MTW32N20E The ON Semiconductor MTW32N20E is an N-Channel MOSFET designed for power switching applications. It offers a 200V drain-source voltage and a continuous current rating of 32A.
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MTW32N20E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MTW32N20E is an N-Channel MOSFET designed for power switching applications. It offers a 200V drain-source voltage and a continuous current rating of 32A.
✓ Total Stock: 44 pcs
$ Price Range: $0.99

MTW32N20E Available from 1 distributor

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MTW32N20E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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MTW32N20E Description

Short technical summary and product information.

The ON Semiconductor MTW32N20E is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current of 32A at a case temperature.

 

Key electrical specifications include a maximum on-resistance (Rds On) of 75mOhm at 16A and 10V gate drive, an input capacitance (Ciss) of 5000pF at 25V, and a gate charge (Qg) of 120nC at 10V. The gate-to-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.

 

This MOSFET is designed for through-hole mounting and comes in a TO-247-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 180W (Tc).

 

The MTW32N20E utilizes MOSFET (Metal Oxide) technology, making it suitable for various power switching and control applications where efficiency and reliability are critical.

MTW32N20E Quick Information

Product Type: MOSFET
Canonical Name: MTW32N20E N-Channel Power MOSFET
Subcategory: N-Channel

MTW32N20E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MTW32N20E Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MTW32N20E Features

  • 200V drain-source voltage rating.
  • 32A continuous drain current.
  • Low 75mOhm on-resistance.
  • TO-247 package for through-hole mounting.
  • Wide -55°C to 150°C operating temperature.

MTW32N20E Applications

  • Suitable for power switching circuits.
  • Ideal for high current applications.
  • Used in power supply designs.
  • Effective in motor control systems.

MTW32N20E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the MTW32N20E?

The maximum drain-source voltage (Vdss) is 200V.

What is the continuous drain current rating?

The continuous drain current is 32A.

What is the Rds On specification?

The Rds On is a maximum of 75mOhm at 16A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

How is the MTW32N20E mounted?

It is designed for through-hole mounting.

What package type is used?

The package type is TO-247-3.

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