| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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583 pcs
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583 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MTP7N20 is an N-Channel Power MOSFET manufactured by UKN, designed for high-energy applications. It offers a drain-source voltage of 200V and a continuous drain current of 7A, with an on-resistance of 0.7 ohms.
This device employs TMOS technology and features a Silicon Gate with enhancement mode operation. It is constructed as a single-element FET. The component is housed in a TO-220 package, suitable for various power applications.
Key electrical characteristics include its N-Channel configuration and its ability to withstand high energy in avalanche and commutation modes. The design focuses on energy efficiency and includes a drain-to-source diode with a fast recovery time, making it suitable for low-voltage, high-power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 200V.
The continuous drain current is 7A.
The on-resistance is 0.7 ohms.
The MTP7N20 is an N-Channel MOSFET.
The MTP7N20 is supplied in a TO-220 package.