MTP3055V The ON Semiconductor MTP3055V is an N-Channel MOSFET designed for high-speed switching applications. It offers a 60V drain-source voltage and 12A continuous current.
Mfr Part #:

MTP3055V

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MTP3055V is an N-Channel MOSFET designed for high-speed switching applications. It offers a 60V drain-source voltage and 12A continuous current.
✓ Total Stock: 3,115 pcs
$ Price Range: $0.99

MTP3055V Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,190 pcs
2190 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
925 pcs
925 pcs On Request 1 On Request On Request 09+ On Request On Request

MTP3055V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MTP3055V Description

Short technical summary and product information.

The MTP3055V from ON Semiconductor is an N-Channel MOSFET designed for low voltage, high-speed switching applications such as power supplies and power motor controls. This MOSFET features a 60V drain-to-source voltage (Vdss) and can handle a continuous drain current of 12A (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 150mOhm at 6A and 10V gate-source voltage (Vgs). The gate charge (Qg) is a maximum of 17nC at 10V Vgs, and input capacitance (Ciss) is 500pF at 25V Vds. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum Vgs of ±20V.

 

This device operates across a wide temperature range from -55°C to 175°C (TJ). It is housed in a TO-220-3 package and utilizes through-hole mounting. The MOSFET technology is Metal Oxide.

 

The MTP3055V is suitable for applications requiring efficient and fast switching performance.

MTP3055V Quick Information

Product Type: MOSFET
Canonical Name: MTP3055V N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel

MTP3055V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MTP3055V Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MTP3055V Features

  • N-Channel MOSFET for high-speed switching.
  • 60V drain-source voltage rating.
  • 12A continuous drain current.
  • Low on-resistance of 150mOhm.
  • TO-220 package with through-hole mounting.

MTP3055V Applications

  • Suitable for low voltage power switching applications.
  • Ideal for motor control and power supplies.
  • Used in high-speed switching circuits.
  • Applicable in rugged, high-temperature environments.

MTP3055V FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) of the MTP3055V?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current for the MTP3055V?

The continuous drain current is 12A.

What is the maximum on-resistance (Rds(on)) of the MTP3055V?

The maximum on-resistance is 150mOhm at 6A and 10V.

What is the operating temperature range for the MTP3055V?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the MTP3055V available in?

The MTP3055V is available in a TO-220-3 package.

How is the MTP3055V mounted?

The MTP3055V is mounted using the through-hole method.

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