| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,000 pcs
|
13000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,651 pcs
|
1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor MTP2P50EG is a P-Channel Power MOSFET designed for high voltage and high-speed switching applications. This device utilizes an advanced termination scheme for enhanced voltage-blocking capability and is designed to withstand high energy in avalanche and commutation modes.
Key electrical specifications include a drain-source voltage (Vdss) of 500 Vdc, a continuous drain current (Id) of 2A at 25°C, and a maximum power dissipation of 75W at 25°C. The gate-source voltage (Vgs) is rated at ±20Vdc continuous, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. The static drain-source on-resistance (Rds(on)) is a maximum of 6 Ohm at 1A and 10V gate drive.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The device is characterized for use in bridge circuits and offers a drain-to-source diode with a fast recovery time, making it well-suited for power supplies, converters, and PWM motor controls where diode speed and safe operating areas are critical.
The MTP2P50EG is Pb-Free. Its robust design and specified avalanche energy (EAS) of 80 mJ provide an additional safety margin against unexpected voltage transients.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the MTP2P50EG is 500 Vdc.
The MTP2P50EG has a continuous drain current of 2A at 25°C and 1.6A at 100°C.
The operating and storage temperature range for the MTP2P50EG is -55°C to 150°C.
The MTP2P50EG is available in a TO-220-3 package.
The maximum power dissipation for the MTP2P50EG is 75W at 25°C.
The Rds(on) is a maximum of 6 Ohm at a drain current of 1A and gate-source voltage of 10V.
Yes, the MTP2P50EG is a Pb-Free device.