MTP23P06V The MTP23P06V is a P-Channel Power MOSFET from On Semiconductor designed for high-speed switching applications. It offers a 60V drain-source voltage and 23A continuous current capability.
Mfr Part #:

MTP23P06V

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MTP23P06V is a P-Channel Power MOSFET from On Semiconductor designed for high-speed switching applications. It offers a 60V drain-source voltage and 23A continuous current capability.
✓ Total Stock: 2,336 pcs
$ Price Range: $0.99

MTP23P06V Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,336 pcs
2336 pcs On Request 1 On Request On Request On Request On Request On Request

MTP23P06V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MTP23P06V Description

Short technical summary and product information.

The MTP23P06V is a P-Channel Power MOSFET manufactured by On Semiconductor. This device is designed to withstand high energy in avalanche and commutation modes, making it suitable for low voltage, high-speed switching applications such as power supplies, converters, and power motor controls.

 

Key electrical specifications include a maximum drain-to-source voltage (VDSS) of 60V and a continuous drain current (ID) of 23A at 25°C. The MOSFET features a low on-resistance (RDS(on)) of 120mOhm at 11.5A and 10V gate-source voltage. It operates within a temperature range of -55°C to 175°C.

 

The MTP23P06V is housed in a TO-220-3 package and utilizes through-hole mounting. This package type is common in power electronics for its thermal dissipation capabilities. The device is also specified for non-repetitive gate-to-source voltage up to ±25Vpk and has a maximum power dissipation of 90W at 25°C.

 

This MOSFET is designed for applications requiring a safety margin against unexpected voltage transients, particularly in bridge circuits where diode speed and commutating safe operating areas are critical.

MTP23P06V Quick Information

Product Type: MOSFET
Canonical Name: MTP23P06V P-Channel Power MOSFET

MTP23P06V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MTP23P06V Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MTP23P06V Features

  • 60V drain-to-source voltage rating.
  • 23A continuous drain current capability.
  • Low Rds(on) of 120mOhm.
  • TO-220 package for power applications.
  • Designed for high-speed switching.

MTP23P06V Applications

  • Suitable for power supply circuits.
  • Used in voltage converter designs.
  • Ideal for power motor controls.
  • Well-suited for bridge circuits.
  • Handles unexpected voltage transients.

MTP23P06V FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the MTP23P06V?

The maximum drain-to-source voltage (VDSS) for the MTP23P06V is 60 Vdc.

What is the continuous drain current of the MTP23P06V at 25°C?

The continuous drain current (ID) for the MTP23P06V at 25°C is 23 Adc.

What is the package type for the MTP23P06V MOSFET?

The MTP23P06V is supplied in a TO-220-3 package and uses through-hole mounting.

What is the operating temperature range for the MTP23P06V?

The operating and storage temperature range for the MTP23P06V is -55°C to 175°C.

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