| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,370 pcs
|
2370 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Panasonic Electronic Components, part number MTM761230LBF, is suitable for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and can handle a continuous drain current of 3A at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 55mOhm maximum, specified at 1A drain current and 4V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1.3V maximum at 1mA. Its input capacitance (Ciss) is 1000pF maximum at 10V Vds.
Designed for surface mounting, this component comes in a WSMini6-F1-B package, also described as 6-SMD, Flat Leads. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 700mW at ambient temperature. The gate-source voltage (Vgs) maximum rating is ±10V, with drive voltages ranging from 2.5V to 4V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current is 3A at ambient temperature.
The maximum on-resistance (Rds On) is 55mOhm at 1A drain current and 4V gate-source voltage.
The operating temperature is up to 150°C (TJ).
It is designed for surface mounting.
The package is 6-SMD, Flat Leads, also known as WSMini6-F1-B.
The gate threshold voltage (Vgs(th)) is 1.3V maximum at 1mA.