MTD6N20ET4G The ON Semiconductor MTD6N20ET4G is an N-Channel Power MOSFET designed for high-speed switching applications. It offers a 200V drain-to-source voltage and a continuous drain current of 6A.
Mfr Part #:

MTD6N20ET4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MTD6N20ET4G is an N-Channel Power MOSFET designed for high-speed switching applications. It offers a 200V drain-to-source voltage and a continuous drain current of 6A.
✓ Total Stock: 13 pcs
$ Price Range: $0.99

MTD6N20ET4G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13 pcs
13 pcs On Request 1 On Request On Request On Request On Request On Request

MTD6N20ET4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MTD6N20ET4G Description

Short technical summary and product information.

The MTD6N20ET4G is an advanced N-Channel Power MOSFET from ON Semiconductor, engineered for high-energy applications and fast switching. It is designed to withstand high energy in avalanche and commutation modes, offering an energy-efficient design with a fast drain-to-source diode recovery time.

 

Key electrical specifications include a maximum drain-to-source voltage (VDSS) of 200V and a continuous drain current (ID) of 6A at 25°C case temperature. The Rds On is specified at a maximum of 700mOhm at 3A, 10V gate-source voltage. Input capacitance (Ciss) is 480pF at 25V, and gate charge (Qg) is 21nC at 10V.

 

This MOSFET is housed in a DPAK (TO-252-3) surface mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C. The device is Pb-Free and RoHS Compliant.

 

Ideal for applications such as power supplies, converters, and PWM motor controls, particularly in bridge circuits where diode speed and safe operating areas are critical. It provides an additional safety margin against unexpected voltage transients.

MTD6N20ET4G Quick Information

Product Type: MOSFET
Canonical Name: MTD6N20ET4G N-Channel Power MOSFET
Subcategory: N-Channel

MTD6N20ET4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MTD6N20ET4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MTD6N20ET4G Features

  • 200V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low Rds On of 700mOhm at 3A, 10V.
  • Surface mount DPAK package.
  • Pb-Free and RoHS Compliant.

MTD6N20ET4G Applications

  • Power supply applications.
  • Converter circuits.
  • PWM motor controls.
  • Bridge circuit applications.

MTD6N20ET4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the MTD6N20ET4G?

The maximum drain-to-source voltage (VDSS) is 200 Vdc.

What is the continuous drain current of the MTD6N20ET4G?

The continuous drain current is 6 Adc.

What is the typical on-resistance for the MTD6N20ET4G?

The maximum on-resistance (Rds On) is 700 mOhm at 3A, 10V.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to 150°C.

What package type is the MTD6N20ET4G supplied in?

The MTD6N20ET4G is supplied in a DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63).

Is the MTD6N20ET4G RoHS compliant?

Yes, the MTD6N20ET4G is RoHS3 Compliant.

Home
Account

Categories