| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The MTD6N15T4G from ON Semiconductor is an N-Channel enhancement-mode silicon gate Power Field Effect Transistor. It is designed for high-speed, low-loss power switching applications such as switching regulators, converters, solenoid, and relay drivers.
Key electrical characteristics include a maximum drain-source voltage of 150V and a continuous drain current of 6A. The Rds(on) is a maximum of 300mOhm at 3A and 10V gate-source voltage. The device features a low drive requirement with a Vgs(th) of 4.5V maximum. Input capacitance is 1200pF at 25V, and gate charge is 30nC at 10V.
This MOSFET operates within a junction temperature range of -65°C to +150°C. Thermal resistance from junction-to-case is 6.25°C/W, and junction-to-ambient is 100°C/W (Note 1) or 71.4°C/W (Note 2).
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It is available in a Pb-Free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 150 Vdc.
The continuous drain current is 6 Adc.
The maximum Rds On is 300mOhm at 3A and 10V.
The operating temperature range is -65°C to 150°C (TJ).
It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.