| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
102 pcs
|
102 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| FET Type | |
| Mounting Type | |
| Technology |
The MTD5N06 from On Semiconductor is a silicon N-Channel Metal-oxide Semiconductor Field-Effect Transistor (MOSFET). It is designed for power switching applications and features a maximum drain-source voltage of 60V and a continuous drain current of 5A.
This MOSFET has a low on-resistance of 0.4 ohms, making it efficient for power management tasks. The device is packaged in a DPAK for surface mounting, suitable for compact electronic designs.
Key electrical characteristics include its N-channel configuration and silicon technology, providing reliable performance in various electronic circuits. Its robust construction and specified parameters make it a suitable component for general-purpose power switching and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MTD5N06 has a maximum drain-source voltage of 60V.
The MTD5N06 can handle a continuous drain current of 5A.
The MTD5N06 has a maximum on-resistance of 0.4 ohms.
The MTD5N06 is an N-Channel MOSFET.
The MTD5N06 is supplied in a DPAK package for surface mounting.