SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,245 pcs
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2245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The MTD1N60ET4 is an N-Channel MOSFET manufactured by ON Semiconductor. It offers a high breakdown voltage of 600V and a continuous drain current of 1A. The MOSFET has a low on-resistance (Rds On) of 1.5 Ohm at 1A and 10V gate-source voltage, making it efficient for power switching applications.
Key electrical characteristics include a gate charge of 10nC and input capacitance of 150pF. It operates within a temperature range of -55°C to 150°C. The device is packaged in a TO-252-3, DPak surface mount package, designed for ease of integration into electronic circuits.
This MOSFET is suitable for various general-purpose applications requiring efficient switching and voltage handling capabilities. Its N-Channel configuration and logic-level gate make it versatile for different circuit designs.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Vds) for the MTD1N60ET4 is 600V.
The continuous drain current (Id) for the MTD1N60ET4 is 1A.
The maximum on-resistance (Rds On) for the MTD1N60ET4 is 1.5 Ohm at a drain current of 1A and gate-source voltage of 10V.
The MTD1N60ET4 MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The operating temperature range for the MTD1N60ET4 is -55°C to 150°C.
Yes, the MTD1N60ET4 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MTD1N60ET4 is 1.