| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The MTB50P03HDLT4G from ON Semiconductor is a P-Channel Power MOSFET designed for demanding applications requiring high energy handling and fast switching speeds. This device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 50A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 25mOhm at 25A and 5V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2V at 250µA. The MOSFET is designed to withstand high energy in avalanche and commutation modes, featuring a drain-to-source diode with fast recovery time, making it suitable for bridge circuits.
Packaged in a surface-mount D2PAK (TO-263-3) package, the MTB50P03HDLT4G is well-suited for power supplies, converters, and PWM motor control applications. Its construction allows for maximum power dissipation, with a rated power of 125W at 25°C case temperature and 2.5W at 25°C ambient temperature.
Operating temperature ranges from -55°C to 150°C. The device is specified for avalanche energy, ensuring reliability against voltage transients. Pb-Free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the MTB50P03HDLT4G is 30 Vdc.
The continuous drain current (Id) is 50 Adc at 25°C case temperature.
The maximum on-resistance (Rds On) is 25mOhm when measured at 25A drain current and 5V gate-source voltage.
The operating and storage temperature range is -55°C to 150°C.
The MTB50P03HDLT4G is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, which is a surface mount type.