| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor MTB50P03HDLT4 is a P-Channel Power MOSFET designed for demanding applications requiring high energy handling and fast switching speeds. With a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 50A at 25°C, this device is suitable for power supplies, converters, and PWM motor controls.
Key electrical characteristics include a low on-resistance (Rds(on)) of 25mOhm at 25A and 5V, and a gate charge (Qg) of 100nC at 5V. The gate threshold voltage (Vgs(th)) is 2V at 250µA, indicating its suitability for logic-level gate drive.
This MOSFET is housed in a D2PAK (TO-263) surface-mount package, facilitating integration into compact designs. Its energy-efficient design and avalanche energy specification provide enhanced reliability against voltage transients. The device is characterized for use in bridge circuits where diode speed and commutation are critical.
Features such as avalanche energy specification and a drain-to-source diode with fast recovery time make it a robust choice for applications like power supplies, converters, and PWM motor controls. The D2PAK package is designed for efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the MTB50P03HDLT4 is 30 Vdc.
The continuous drain current (Id) for the MTB50P03HDLT4 is 50 Adc at 25°C and 31 Adc at 100°C.
The on-resistance (Rds(on)) of the MTB50P03HDLT4 is a maximum of 25mOhm when measured at 25A drain current and 5V gate-source voltage.
The MTB50P03HDLT4 is supplied in a D2PAK package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
The operating and storage temperature range for the MTB50P03HDLT4 is from -55°C to 150°C.