MTB30P06VT4G The On Semiconductor MTB30P06VT4G is a P-Channel Power MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a continuous current rating of 30A.
Mfr Part #:

MTB30P06VT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MTB30P06VT4G is a P-Channel Power MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a continuous current rating of 30A.
✓ Total Stock: 18 pcs
$ Price Range: $0.99

MTB30P06VT4G Available from 1 distributor

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MTB30P06VT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

MTB30P06VT4G Description

Short technical summary and product information.

The MTB30P06VT4G from On Semiconductor is a P-Channel Power MOSFET designed for demanding applications such as power supplies, converters, and motor controls. This device is engineered to withstand high energy in avalanche and commutation modes, offering a critical safety margin against unexpected voltage transients.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 80mOhm at 15A and 10V gate-to-source voltage, ensuring efficient power transfer. It operates within a wide temperature range of -55°C to 175°C.

 

Packaged in a surface-mount D2PAK (TO-263-3) package, the MTB30P06VT4G is suitable for automated assembly processes. Its design prioritizes high-speed switching performance, making it well-suited for bridge circuits where fast diode speed and robust safe operating areas are essential. The device is also specified for avalanche energy, providing an additional layer of reliability.

MTB30P06VT4G Quick Information

Product Type: MOSFET
Series: MTB30P06VT4G
Canonical Name: P-Channel Power MOSFET
Subcategory: P-Channel

MTB30P06VT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MTB30P06VT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MTB30P06VT4G Features

  • 60V drain-to-source voltage rating.
  • 30A continuous drain current.
  • Low 80mOhm Rds On.
  • Surface mount D2PAK package.
  • Designed for high-speed switching.

MTB30P06VT4G Applications

  • Power supply applications.
  • DC-DC converters.
  • Power motor controls.
  • Bridge circuit designs.
  • High-speed switching circuits.

MTB30P06VT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the MTB30P06VT4G?

The maximum drain-to-source voltage (Vdss) is 60 Vdc.

What is the continuous drain current rating at 25°C?

The continuous drain current at 25°C is 30 Adc.

What is the typical Rds On for this MOSFET?

The Rds On is a maximum of 80mOhm at 15A drain current and 10V gate-to-source voltage.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 175°C.

What package type is the MTB30P06VT4G supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is this MOSFET RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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