| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,294 pcs
|
1294 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Storage Temperature | |
| Tape & Reel |
The CYSTEK MTB22A03AKQ8 is a Dual N-Channel Enhancement Mode Power MOSFET designed for various applications requiring efficient power switching. It features a maximum Drain-Source Voltage (BVDSS) of 30V and a continuous drain current (ID) of 10.7A at 25°C case temperature.
Key electrical characteristics include a typical On-Resistance (RDS(ON)) of 16mΩ at VGS=10V and ID=7A, and 22mΩ at VGS=4.5V and ID=7A. The device also offers a typical Gate Threshold Voltage (VGS(th)) between 1V and 2.5V.
This MOSFET is housed in a RoHS compliant and Halogen-free SOP-8 package, suitable for tape and reel packaging with a standard quantity of 4000 pieces. The operating junction and storage temperature range is -55°C to +150°C.
With its simple drive requirement, low on-resistance, and fast switching characteristics, the MTB22A03AKQ8 is a suitable component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (BVDSS) for the MTB22A03AKQ8 is 30V.
The typical continuous drain current (ID) is 10.7A at VGS=10V and TC=25°C (package limit), and 6.5A at VGS=10V and TA=25°C.
The typical On-Resistance (RDS(ON)) is 16mΩ at VGS=10V and ID=7A, and 22mΩ at VGS=4.5V and ID=7A.
The operating junction and storage temperature range is -55°C to +150°C.
The MTB22A03AKQ8 is supplied in an SOP-8 package.
Yes, the MTB22A03AKQ8 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.